Samsung has announced that it has begun mass production of its new 8th-generation Vertical NAND, which the company says is the highest bit density in the industry.
The new 1TB V-NABD is the highest storage capacity to date and is designed to provide more storage space for the next generation of enterprise servers.
“As the market demand for denser, higher-capacity storage drives higher V-NAND layer counts, Samsung employs its advanced 3D scaling technology to reduce surface area and height while avoiding the cell-to-cell that typically occurs when scaling down interference,” said SungHoi Hur, executive vice president of flash memory products and technology at Samsung Electronics. “Our eighth-generation V-NAND will help meet rapidly growing market demands and allow us to better provide more differentiated products and solutions that will be the foundation for future storage innovations.”
Samsung has achieved the industry’s highest bit density by significantly increasing bit throughput per wafer. Based on the Toggle DDR 5.0 interface* – the latest NAND flash memory standard – Samsung’s eighth-generation V-NAND features input and output (I/O) speeds of up to 2.4 Gbps, 1.2 times faster than its predecessor. last generation. This will enable the new V-NAND to meet the performance requirements of PCIe 4.0 and later PCIe 5.0.
You can find more details about the new Samsung 8th generation vertical NAND on the Samsung website linked below.
Filed Under: Hardware, Technology News
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